Title :
A compact 5–6 GHz T/R module based on SiGe BiCMOS and SOI that enhances 256 QAM 802.11ac WLAN radio front-end designs
Author :
Huang, Chun-Wen Paul ; Doherty, M. ; Lam, Linh ; Quaglietta, Anthony ; Johnson, Mark ; Vaillancourt, Bill
Author_Institution :
Skyworks Solutions Inc., Andover, MA, USA
Abstract :
A compact high linearity 4.9-5.9 GHz T/R FEM is presented, which consists of a SiGe BiCMOS PA and a SOI switched LNA realized in an ultra-compact 2.3 × 2.3 × 0.33 mm3 QFN package. The Tx chain has > 30 dB gain and meets -35 dB DEVM up to 17 dBm at 3.3 V and 20 dBm at 5V, insensitive to modulation bandwidths and transmission data length up to 4 mS. With digital pre-distortion (DPD), the PA can be down-biased to save 30 mA while maintaining its linearity. The Rx chain features <;2.5 dB NF and 12 dB gain with 4 dBm IIP3 and 8 dB bypass attenuator with 29 dBm IIP3. All the unique features enhance the front-end circuit designs of complex 802.11ac radios.
Keywords :
BiCMOS integrated circuits; germanium compounds; low noise amplifiers; microwave power amplifiers; quadrature amplitude modulation; radio receivers; radio transmitters; silicon compounds; silicon-on-insulator; wireless LAN; 256 QAM 802.11ac WLAN radio front-end design enhancement; DEVM; SOI; compact transmit-receive module; current 30 mA; digital predistortion; frequency 4.9 GHz to 5.9 GHz; gain 12 dB; gain 30 dB; modulation bandwidths; silicon germanium BiCMOS power amplifier; silicon-on-insulator switched low noise amplifier; transmission data length; ultra-compact QFN package; voltage 3.3 V; wireless local area networks; Finite element analysis; Gain; Linearity; MIMO; Silicon germanium; Switches; Wireless LAN; LNA designs; PA design; T/R switch designs; WLAN 802.11ac front-end ICs; WLAN front-end module.);
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
Conference_Location :
Tampa, FL
DOI :
10.1109/WAMICON.2014.6857790
