• DocumentCode
    1827281
  • Title

    Nanoscale imaging of charge distribution in thin films by modified AFM

  • Author

    Kazimierski, P. ; Tyczkowski, J.

  • Author_Institution
    Centre of Molecular & Macromolecular Studies, Polish Acad. of Sci., Lodz, Poland
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    An atomic force microscope (AFM) equipped with a conductive tip and working in the contact mode is fully exploited for charge distribution imaging and modification. Measurements of electric properties such as capacitance, trapped charge, or potential of insulating films have up to now mainly been reported from instruments operating in the non-contact mode. An AFM working in the net repulsive force regime (contact mode) would also allow gaining insight into local conductivity and tribological features. A necessary prerequisite was to render conductive commercial cantilevers (Nanoprobe). Finally, it was found that evaporation of 35 nm of titanium yields a mechanically permanent layer with satisfying and stable electric conductivity. Problems not only arise from the preparation of a conductive tip but also from the interpretation of topography and lateral force signals, respectively. The presence of charge manifests itself both in the topography and lateral force signals as additional features. The main purpose of this paper is investigation of local charge distribution in carbon germanium films and its interpretation in the framework of the dedicated model
  • Keywords
    atomic force microscopy; germanium compounds; nanostructured materials; semiconductor thin films; space charge; surface topography; GeC; GeC film; charge distribution; lateral force signals; modified AFM; nanoscale imaging; thin films; topography; Atomic force microscopy; Atomic measurements; Capacitance measurement; Charge measurement; Conductive films; Conductivity; Current measurement; Electric variables measurement; Surfaces; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
  • Conference_Location
    Athens
  • Print_ISBN
    0-7803-5025-1
  • Type

    conf

  • DOI
    10.1109/ISE.1999.831949
  • Filename
    831949