DocumentCode :
1827285
Title :
Impact of palladium to the interfacial behavior of palladium coated copper wire on aluminium pad metallization during high temperature storage
Author :
Stephan, Dominik ; Chew, Effie ; Yeung, Johnny ; Milke, Eugen
Author_Institution :
Heraeus Mater. Singapore Pte Ltd., Singapore, Singapore
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
294
Lastpage :
303
Abstract :
Reliability of palladium coated copper wire is believed to have enhancement over bare copper wire. With current understanding, the main failure mode in copper wire bonding is galvanic corrosion of the less stable Cu9Al4 intermetallic compound (IMC) phase in the highly accelerated stress test (HAST). In gold wire bonding, palladium (Pd) is known to retard formation of the corrosive prone Au4Al phase, which resulted in better reliability in high temperature storage (HTS) test. Recent literature on palladium coated copper wire suggested that also in copper-aluminium interfaces, IMC growth of Cu9Al4 is slowed down by palladium-enriched layer. However it is not fully understood on how the palladium in palladium coated copper wire interacts with the other metals within this interface. This paper covers the study of IMC phase growth rate using a palladium coated copper wire on an aluminium bond pad, palladium distribution and identification of IMC phase by means of optical microscopy, SEM and TEM. Bonded balls of palladium coated copper wire were prepared using different EFO sparking condition to achieve an obvious palladium rich phase layer at the interface and another condition without palladium rich phase. The formation and growth of the IMC phase can be achieved by subjecting the bonded ball to high temperature storage (HTS) test in an un-molded device and analyzing the IMC phase at different aging durations. The results of this IMC study could give insights as to which initial interface morphology is more robust against the common corrosion in HAST test.
Keywords :
aluminium alloys; copper alloys; corrosion protection; failure analysis; galvanising; high-temperature electronics; lead bonding; metallisation; palladium; Cu9Al4; EFO sparking condition; IMC growth; IMC phase; Pd; SEM; TEM; aging durations; aluminium bond pad; aluminium pad metallization; bare copper wire; bonded balls; copper wire bonding; copper-aluminium interfaces; corrosive prone phase; failure mode; galvanic corrosion; gold wire bonding; high temperature storage test; highly accelerated stress test; interface morphology; interfacial behavior; intermetallic compound phase; optical microscopy; palladium coated copper wire; palladium distribution; palladium rich phase layer; palladium-enriched layer; un-molded device; Bonding; Copper; Materials; Optical imaging; Palladium; Reliability; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
Type :
conf
DOI :
10.1109/EPTC.2011.6184434
Filename :
6184434
Link To Document :
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