A 1.4 GHz MMIC active isolator for integrated wireless systems applications

Author

Cordoba-Erazo, Maria F. ; Weller, Thomas M.

Author_Institution

Center for Wireless & Microwave Inf. Syst., Univ. of South Florida, Tampa, FL, USA

fYear

2014

fDate

6-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A GaAs MMIC active isolator with a center frequency of 1.4 GHz and a bandwidth of 200 MHz is described. The active isolator combines a low-noise amplifier and a Tee attenuator. The transistor used for the low-noise amplifier is a PHEMT D-FET with 5 gate fingers and a gate width of 50 μm. The characteristic impedance of the attenuator is 50Ω. This simple design results in an insertion loss of 2.5 dB, input and output return loss greater than 12 dB, reverse isolation of 31 dB and noise figure of 5.3 dB.

Keywords

III-V semiconductors; MMIC amplifiers; attenuators; gallium arsenide; high electron mobility transistors; low noise amplifiers; microwave isolators; GaAs; GaAs MMIC active isolator; PHEMT D-FET; Tee attenuator characteristic impedance; bandwidth 200 MHz; frequency 1.4 GHz; gate width; insertion loss; integrated wireless system application; loss 2.5 dB; low noise amplifier; noise figure; resistance 50 ohm; reverse isolation; Attenuators; Gain; Gallium arsenide; Isolators; MMICs; Noise; Noise figure; Active isolator; GaAs MMIC technology; integrated wireless systems; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/WAMICON.2014.6857797

Filename

6857797