Title :
Industrial applications of GaAs IC-are we breaking the ice?
Author :
Nishi, H. ; Suyama, K.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
A discussion is presented of the current status and future trends of GaAs IC technology from the viewpoint of developing and manufacturing products primarily for telecommunication and electronic data processing applications. The performance of an advanced, submicron, self-aligned MESFET with a cutoff frequency of 40-50 GHz is compared with that achievable by Si ECL (emitter-coupled logic) technology. The conditions required for GaAs to survive in the marketplace are discussed.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated logic circuits; 40 to 50 GHz; GaAs; GaAs IC technology; electronic data processing; industrial applications; logic circuits; self-aligned MESFET; submicron devices; telecommunication; Application specific integrated circuits; Consumer electronics; Cutoff frequency; Data processing; Gallium arsenide; Ice; Logic; MESFETs; Manufacturing industries; Manufacturing processes;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69285
