Industrial applications of GaAs IC-are we breaking the ice?

Author

Nishi, H. ; Suyama, K.

Author_Institution

Fujitsu Ltd., Kawasaki, Japan

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

19

Lastpage

22

Abstract

A discussion is presented of the current status and future trends of GaAs IC technology from the viewpoint of developing and manufacturing products primarily for telecommunication and electronic data processing applications. The performance of an advanced, submicron, self-aligned MESFET with a cutoff frequency of 40-50 GHz is compared with that achievable by Si ECL (emitter-coupled logic) technology. The conditions required for GaAs to survive in the marketplace are discussed.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated logic circuits; 40 to 50 GHz; GaAs; GaAs IC technology; electronic data processing; industrial applications; logic circuits; self-aligned MESFET; submicron devices; telecommunication; Application specific integrated circuits; Consumer electronics; Cutoff frequency; Data processing; Gallium arsenide; Ice; Logic; MESFETs; Manufacturing industries; Manufacturing processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69285

Filename

69285