Title :
Contact resistance of TiW to Phase Change Material in the amorphous and crystalline states
Author :
Roy, D. ; Zandt, M. A A int ; Wolters, R.A.M. ; Timmering, C.E. ; Klootwijk, J.H.
Author_Institution :
NXP-TSMC Res. Center, Eindhoven, Netherlands
Abstract :
Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.
Keywords :
amorphous state; antimony compounds; contact resistance; germanium compounds; metal-insulator boundaries; phase change materials; titanium alloys; tungsten alloys; Ti0.3W0.7-Ge2Sb2Te5; Ti0.3W0.7-Sb2Te:Jk; amorphous states; circular transfer length method; contact resistance; crystalline states; electrical property; phase change material; phase change random access memory cell; temperature 120 degC; Amorphous materials; Amorphous semiconductors; Contact resistance; Crystallization; Phase change materials; Phase change random access memory; Tellurium; Temperature; Titanium; Tungsten; CTLM; PCM; chalcogenide; contact resistance; specific contact resistance;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4953-8
Electronic_ISBN :
978-1-4244-4954-5
DOI :
10.1109/NVMT.2009.5429780
