Modeling of the self-heating in STTRAM and analysis of its impact on reliable memory operations

Author

Chatterjee, Subho ; Salahuddin, Sayeef ; Kumar, Satish ; Mukhopadhyay, Saibal

Author_Institution

ECE, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

86

Lastpage

89

Abstract

This work presents modeling of the self-heating effect in Spin Torque Transfer RAMs (STTRAM) and analyzes its impact on the functional reliability. We perform computational fluid dynamics based 3-D thermal simulation in Fluent^Â© for STTRAM at 90 nm technology and characterize the thermal profile considering write condition. The thermal analysis is connected to device and circuit simulators to estimate the effect of self-heating on two functional reliability metrics - read margin and sensing accuracy.

Keywords

computational fluid dynamics; integrated circuit reliability; random-access storage; 3D thermal simulation; Fluent; STTRAM; computational fluid dynamics; memory operations; reliability metrics; self-heating effect; spin torque transfer RAM; thermal analysis; thermal profile; CMOS technology; Circuit simulation; Computational modeling; Logic; Magnetic analysis; Magnetic tunneling; Power system reliability; Random access memory; Read-write memory; Torque; Magnetic Tunnel Junction; Reliability; Self-heating; Spin Torque Transfer RAM; Thermal Analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-4953-8

Electronic_ISBN

978-1-4244-4954-5

Type

conf

DOI

10.1109/NVMT.2009.5429785

Filename

5429785