DocumentCode :
1828021
Title :
Cycling impact on the Gm degradation and GIDL current of 65nm 2T-embedded Flash memory
Author :
Kim, Sung-Rae ; Han, Kyung Joon ; Lee, Kin-Sing ; Singaraju, Pavan ; Li, Rophina ; Liu, Patty ; Yingbo Jia ; Schmid ; Wang, Yu ; Dhaoui, Fethi ; Hawley, Frank ; Tseng, Huan-Chung
Author_Institution :
Actel Corp., Mountain View, CA, USA
fYear :
2009
fDate :
25-28 Oct. 2009
Firstpage :
77
Lastpage :
79
Abstract :
Abnormal Gm degradation and GIDL current in the Uniform Channel Program and Erase (UCPE) floating gate 2 transistor (2T)-embedded flash cell (eFlash) is investigated. Severe charge trapping and de-trapping at the floating gate to junction overlap area lead to the endurance failure and cell current degradation. Control Gate (CG)-Select Gate (SG) Inter-junction trapping further degrades endurance and GIDL due to enhanced field and deeply depleted inter-junction. High temperature retention bake showed the charge relaxation and subsequent failure in the programmed cells. In this paper, we report both Gm and GIDL improvement of 2T eFlash memory with optimized gate-sidewall and extra thermal steps within the constraint of embedding flash process in the 65 nm standard logic process.
Keywords :
flash memories; transistor circuits; 2T-embedded flash memory; GIDL current; Gm degradation; cell current degradation; charge trapping; cycling impact; de-trapping; floating gate 2 transistor; high temperature retention; logic process; size 65 nm; uniform channel program and erase; Degradation; Flash memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4953-8
Electronic_ISBN :
978-1-4244-4954-5
Type :
conf
DOI :
10.1109/NVMT.2009.5429786
Filename :
5429786
Link To Document :
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