Characterization of high performance CNT-based TSV for radar applications

Author

Kim, Bruce ; Kannan, Sukeshwar ; Gupta, Anurag ; Noh, Seok-Ho ; Li, Li

Author_Institution

Univ. of Alabama, Tuscaloosa, AL, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

445

Lastpage

449

Abstract

In this paper, we present modeling and characterization of CNT-based TSVs to be used in radar applications. We have developed an integrated model of CNT-based TSVs by incorporating quantum confinement effects of CNTs along with kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as monolithic microwave capacitor by resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine optimized configuration for TSV-based CNTs for radar applications.

Keywords

capacitors; polynomials; radar; three-dimensional integrated circuits; high performance CNT-based TSV; kinetic inductance phenomenon; monolithic microwave capacitor; quantum confinement effects; radar applications; two-polynomial equation; Frequency measurement; Integrated circuit modeling; Materials; Mathematical model; Quantum capacitance; Radar applications; Through-silicon vias; CNT; Modeling; Radar application; Signal integrity; TSV;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th

Conference_Location

Singapore

Print_ISBN

978-1-4577-1983-7

Electronic_ISBN

978-1-4577-1981-3

Type

conf

DOI

10.1109/EPTC.2011.6184462

Filename

6184462