• DocumentCode
    1828159
  • Title

    Evidence of erratic behaviors in p-channel floating gate memories and a cell architectural solution

  • Author

    Chimenton, Andrea ; Zambelli, Cristian ; Olivo, Piero ; Leisenberger, Friedrich Peter ; Wiesner, Andreas ; Schatzberger, Gregor ; Wachmann, Ewald ; Schrems, Martin

  • Author_Institution
    Dipt. di Ing., Univ. di Ferrara, Ferrara, Italy
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    This work shows for the first time the presence of erratic phenomena in p-channel floating gate memories using Fowler Nordheim tunneling for both program and erase operations. A specific p-channel EEPROM architecture is investigated and found to be intrinsically robust against erratic behaviors. A comparison between the p-channel device and a conventional n-channel Flash is discussed and physical interpretations are suggested.
  • Keywords
    EPROM; semiconductor device reliability; Fowler Nordheim tunneling; cell architectural solution; erratic behaviors; p-channel EEPROM architecture; p-channel floating gate memories; Automotive engineering; Degradation; EPROM; Electrons; Noise measurement; Nonvolatile memory; Robustness; Telegraphy; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-4244-4953-8
  • Electronic_ISBN
    978-1-4244-4954-5
  • Type

    conf

  • DOI
    10.1109/NVMT.2009.5429792
  • Filename
    5429792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1828159