Title :
Evidence of erratic behaviors in p-channel floating gate memories and a cell architectural solution
Author :
Chimenton, Andrea ; Zambelli, Cristian ; Olivo, Piero ; Leisenberger, Friedrich Peter ; Wiesner, Andreas ; Schatzberger, Gregor ; Wachmann, Ewald ; Schrems, Martin
Author_Institution :
Dipt. di Ing., Univ. di Ferrara, Ferrara, Italy
Abstract :
This work shows for the first time the presence of erratic phenomena in p-channel floating gate memories using Fowler Nordheim tunneling for both program and erase operations. A specific p-channel EEPROM architecture is investigated and found to be intrinsically robust against erratic behaviors. A comparison between the p-channel device and a conventional n-channel Flash is discussed and physical interpretations are suggested.
Keywords :
EPROM; semiconductor device reliability; Fowler Nordheim tunneling; cell architectural solution; erratic behaviors; p-channel EEPROM architecture; p-channel floating gate memories; Automotive engineering; Degradation; EPROM; Electrons; Noise measurement; Nonvolatile memory; Robustness; Telegraphy; Threshold voltage; Tunneling;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4953-8
Electronic_ISBN :
978-1-4244-4954-5
DOI :
10.1109/NVMT.2009.5429792
