W-CDMA SiGe TX-IC with high dynamic range and high power control accuracy

Author

Joba, H. ; Takahashi, Y. ; Matsunami, Y. ; Itoh, K. ; Shinjo, S. ; Suematsu, N. ; Malhi, D.S. ; Wang, D. ; Schelkle, K. ; Bacon, P.

Author_Institution

Mobile Commun. Bus. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

3-4 June 2002

Firstpage

27

Lastpage

30

Abstract

This paper demonstrates the SiGe TX-IC for W-CDMA mobile terminals. For the TX-IC, a novel architecture of a variable gain amplifier is proposed to improve dynamic range and power control accuracy. With the 0.5 /spl mu/m SiGe BiCMOS technology, this TX-IC achieved over 100 dB dynamic ranges within /spl plusmn/1.5dB accuracy over all temperatures. Output power of 7 dBm can be achieved by employment of P-MOSFET current mirror type self bias control circuit for the driver amplifier. Measurement results also satisfy the specification defined by 3GPP.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; current mirrors; driver circuits; mobile radio; power control; radio transmitters; semiconductor materials; telecommunication terminals; 0.5 micron; 3GPP; BiCMOS technology; P-MOSFET current mirror; SiGe TX-IC; W-CDMA mobile terminal; driver amplifier; dynamic range; power control; self-bias control circuit; variable gain amplifier; BiCMOS integrated circuits; Dynamic range; Gain; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Power control; Power generation; Silicon germanium; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1011503

Filename

1011503