DocumentCode :
1828244
Title :
Study of interaction between Cu-SnAg and Ni-SnAg interfacial reactions by low solder volume in 3D IC packaging
Author :
Hsiao, Hsiang-yao ; Huang, Yi-Sa ; Chen, Chih
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
474
Lastpage :
479
Abstract :
Metallurgical reactions in Ni/ SnAg2.3 solder/ Cu system are investigated by varying the solder thickness from 40μm to 10μm. We found that the growth rate of the interfacial intermetallic compounds (IMCs) strongly depend on the solder thickness. In the Ni/ 40-μm solder/ Cu samples, the (Cu, Ni)6Sn5 IMCs on the Ni side grew slightly faster than those on the Cu side. However, the trend reverses as the solder thickness decreases below 20μm. The (Cu, Ni)6Sn5 on the Ni side even stop growing after 4-min reflow at 260°C in the Ni/10μm solder/ Cu samples. Yet, the IMCs on the Cu side grew thicker than that in Ni/ 40μm solder/ Cu samples. Compositional analysis reveals that the Cu and Ni concentrations in the solder increases with the decreasing in solder thickness. The changes in the Ni and Cu concentration in the solder plays crucial role on the growth rates at the IMCs in the Ni/ SnAg solder/ Cu system.
Keywords :
copper alloys; integrated circuit metallisation; integrated circuit packaging; nickel alloys; silver alloys; soldering; three-dimensional integrated circuits; tin alloys; 3D IC packaging; Cu-Sn-Ag; Ni-Sn-Ag; growth rate; interfacial intermetallic compounds; interfacial reaction; metallurgical reactions; solder volume; Atomic measurements; Bonding; Copper; Nickel; Soldering; Thickness measurement; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
Type :
conf
DOI :
10.1109/EPTC.2011.6184467
Filename :
6184467
Link To Document :
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