Title :
A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology
Author :
Hyunchol Shin ; Zhiwei Xu ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
This paper presents a quadrature VCO that can be reconfigured between 6 and 9 GHz frequency bands. The dual-band VCO comprises a 6 GHz LC VCO, two 1/2-dividers, two mixers, and two 3 GHz notch filters. The 9 GHz output is generated based on a fractional frequency multiplication method by mixing the 6 GHz VCO output with its divide-by-two signal. The VCO, implemented in a 0.18 /spl mu/m SiGe BiCMOS technology, shows a fast switching time of 3.6 nsec. The measured VCO phase noises are -106 dBc/Hz and -104 dBc/Hz at 1 MHz offset for 6 and 9 GHz modes, respectively, while draining 10.8 mA from a 1.8 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; integrated circuit design; semiconductor materials; switched networks; variable-frequency oscillators; voltage-controlled oscillators; 0.18 micron; 1.8 V; 1/2-dividers; 10.8 mA; 3.6 ns; 6 GHz; 9 GHz; SiGe; SiGe BiCMOS technology; VCO phase noise; dual-band transceiver; fractional frequency multiplication method; mixers; notch filters; quadrature LC VCO; switchable dual-band VCO; BiCMOS integrated circuits; Dual band; Filters; Frequency conversion; Germanium silicon alloys; Noise measurement; Phase measurement; Signal generators; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011513
