A 1 V 3.8-5.7 GHz differentially-tuned VCO in SOI CMOS

Author

Fong, N. ; Plouchart, J.-O. ; Zamdmer, N. ; Duixian Liu ; Wagner, L. ; Plett, C. ; Tarr, G.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

fYear

2002

fDate

3-4 June 2002

Firstpage

75

Lastpage

78

Abstract

A 1 V 3.8-5.7 GHz VCO was designed and fabricated in a 0.13 /spl mu/m SOI CMOS process. This VCO features differentially-tuned accumulation MOS varactors that (a) provides 40% frequency tuning when biased between 0 to 1 V, and (b) rejects common-mode noise such as flicker noise. At 1 MHz offset, the phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 to 2.7 mW depending on the centre frequency. When V/sub DD/ is reduced to 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.

Keywords

CMOS analogue integrated circuits; MMIC oscillators; circuit tuning; integrated circuit design; integrated circuit noise; phase noise; silicon-on-insulator; varactors; voltage-controlled oscillators; 0 to 1 V; 0.13 micron; 0.75 V; 0.8 mW; 2.3 to 2.7 mW; 3.8 to 5.7 GHz; SOI CMOS process; accumulation MOS varactors; differentially-tuned VCO; differentially-tuned varactors; flicker noise; frequency tuning; phase noise; varactor noise analysis; 1f noise; CMOS technology; Frequency; Integrated circuit noise; Low-frequency noise; Phase noise; Tuning; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1011514

Filename

1011514