Title :
A Novel Infrared Sensor Structure Compatible to Standard CMOS Process
Author :
Wu, Yundong ; Chen, Rong ; Jiang, Wenjian ; Yu, Ting ; Yu, Fengqi
Author_Institution :
Shenzhen Inst. of Adv. Technol., Dept. of Integrated Electron., Chinese Univ. of Hong Kong, Shenzhen, China
Abstract :
This paper presents a new type of un-cooled thermal infrared sensor, which is compatible to standard CMOS process. The proposed infrared sensor adopts a suspended n-well containing several p+/n-well diodes as infrared sensing element. The thermal analysis indicates that the sensor exhibits excellent steady-state and transient thermal property. The theoretical analysis shows that the temperature coefficient is independent of temperature and process parameters, which is not true for conventional infrared sensors using single p-n diode. The simulation results based on SMIC 0.18μm CMOS process are consistent with theoretical ones. Compared to traditional p-n diode infrared sensor, the proposed structure is more suitable for constructing an infrared focal plane array (IRFPA) for imaging applications.
Keywords :
CMOS analogue integrated circuits; focal planes; infrared detectors; p-n junctions; sensor arrays; thermal analysis; SMIC; infrared focal plane array; infrared sensing element; p-n diode; size 0.18 mum; standard CMOS process; steady-state thermal property; temperature coefficient; thermal analysis; transient thermal property; uncooled thermal infrared sensor structure; well diodes; CMOS process; Infrared sensors; Schottky diodes; Temperature; Temperature sensors; Thermal analysis; p-n diode; standard CMOS process; temperature coefficient; un-cooled infrared sensor;
Conference_Titel :
Modeling, Simulation and Visualization Methods (WMSVM), 2010 Second International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-7077-8
Electronic_ISBN :
978-1-4244-7078-5
DOI :
10.1109/WMSVM.2010.73
