Title :
An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology
Author :
Schelmbauer, W. ; Pretl, H. ; Maurer, L. ; Adler, B. ; Weigel, R. ; Hagelauer, R. ; Fenk, J.
Author_Institution :
Inst. for Commun. & Inf. Eng., Linz Univ., Austria
Abstract :
A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA) and circuits to reduce the effects of DC-offsets. The whole chain is able to provide a voltage gain from -14 dB up to 50 dB in 1 dB steps and 43 dB adjacent channel selectivity. The total receiver current consumption for a supply voltage of 2.7 V is less than 45 mA, whereby the baseband chain consumes 15 mA.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; cellular radio; mobile radio; radio receivers; -14 to 50 dB; 0.35 micron; 15 mA; 2.7 V; 75 GHz; 75 GHz transit frequency; DC-offsets; SiGe; SiGe BiCMOS technology; UMTS; adjacent channel selectivity; analog baseband chain; current consumption; fully integrated channel selection filter; low-noise buffer; programmable gain amplifiers; voltage gain; zero-IF receiver; 3G mobile communication; Baseband; BiCMOS integrated circuits; Electronics packaging; Filters; Frequency; Germanium silicon alloys; Low-noise amplifiers; Silicon germanium; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011546
