Title :
Bulk-driven gain-enhanced fully-differential amplifier for VT + 2Vdsat operation
Author :
Layton, Kent D. ; Comer, Donald T. ; Comer, David J.
Author_Institution :
AMI Semconductor, American Fork, American Fork, UT
Abstract :
A bulk-driven fully differential CMOS amplifier based on an active bootstrapped gain enhancement technique is introduced. The gain enhancement technique produces gains in excess of 100dB at supply voltages below VT + 2Vdsat in a two stage amplifier. The design constraints for obtaining maximum speed with this architecture are discussed. Simulations of the fully differential amplifier designed in an AMIS 0.35mum CMOS process with a class-AB output stage are shown and compared to other low-voltage amplifier architectures.
Keywords :
CMOS analogue integrated circuits; bootstrap circuits; differential amplifiers; integrated circuit design; AMIS CMOS process; active bootstrapped gain enhancement technique; bulk-driven fully differential CMOS amplifier; class-AB output stage; two stage amplifier; Ambient intelligence; Analog circuits; Differential amplifiers; Low voltage; Noise reduction; Operational amplifiers; Signal to noise ratio; Threshold voltage; Transconductance; Transistors;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541358
