Title :
Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application
Author :
Cidronali, A. ; Collodi, G. ; Camprini, M. ; Nair, V. ; Manes, G. ; Lewis, J. ; Goronkin, H.
Author_Institution :
Dept. Electron. & Telecommun., Florence Univ., Firenze, Italy
Abstract :
The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/TD based voltage controlled oscillator operating in the 6 GHz band suitable for wireless applications. The circuit draws a current of 1.75 mA at 500 mV and generates an output power of -16 dBm. The maximum tuning range is 150 MHz and the single sideband-to-carrier ratio (SSCR) is of -105 dBc/Hz at 5 MHz.
Keywords :
HEMT integrated circuits; MMIC oscillators; circuit tuning; field effect MMIC; low-power electronics; negative resistance circuits; tunnel diode oscillators; voltage-controlled oscillators; 1.75 mA; 500 mV; 6 GHz; InP; InP HEMT; LF stability condition; MMIC VCO; NDR; heterojunction interband tunnel diode; low DC power consumption; low frequency stability condition; monolithic integration; negative differential resistance; quantum functional nonlinear devices; ultra low-power VCO; voltage controlled oscillator; wireless application; Energy consumption; HEMTs; Heterojunctions; MODFETs; Monolithic integrated circuits; Power generation; Semiconductor devices; Semiconductor diodes; Tunneling; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011554
