DocumentCode :
1829028
Title :
1.55 µm InP-based VCSEL with enhanced modulation bandwidths ≫ 10 GHz up to 85°C
Author :
Hofmann, W. ; Müller, M. ; Böhm, G. ; Ortsiefer, M. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching
fYear :
2009
fDate :
22-26 March 2009
Firstpage :
1
Lastpage :
3
Abstract :
VCSELs at 1.55-mum with reduced parasitics and improved active region provide superior modulation-bandwidths >10 GHz up to 85degC. These bandwidths enable potential bit-rates of 12.5 or even 17 Gb/s for cost-effective 100 G Ethernet solutions.
Keywords :
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; local area networks; optical materials; optical modulation; optical transmitters; surface emitting lasers; Ethernet; InP; VCSEL modulation bandwidth; bit rate 17 Gbit/s; vertical cavity surface emitting laser; wavelength 1.55 mum; Bandwidth; Vertical cavity surface emitting lasers; (060.4510) Optical communications; (250.7260) Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
Type :
conf
Filename :
5032815
Link To Document :
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