Title :
A 0.15-/spl mu/m GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications
Author :
Campbell, C.F. ; Heins, M.S. ; Kao, M.Y. ; Muir, M.E. ; Carroll, J.M.
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
The design and performance of a 0.15-/spl mu/m MHEMT transimpedance amplifier IC suitable for 40-Gb/s receiver applications is presented. Experimental results for the circuit demonstrate 263/spl Omega/ of transimpedance and 42.6 GHz 3dB-bandwidth with 0.075 pF of photodiode capacitance connected at the input. The IC dissipates 180 mW of power from a single +6V supply and has a die area of 0.72 mm/sup 2/.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium arsenide; optical fibre communication; optical receivers; photodiodes; semiconductor device breakdown; 0.075 pF; 0.15 micron; 180 mW; 263 ohm; 40 Gbit/s; 42.6 GHz; 6 V; GaAs; IC power dissipation; MHEMT transimpedance amplifier IC; die area; fiber optic communication systems; optical receiver components; photodiode capacitance; receiver applications; Application specific integrated circuits; Capacitance; Capacitors; Delay; Gallium arsenide; Impedance; Photodiodes; Scattering parameters; Semiconductor device measurement; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011563
