40-GHz MMICs for optical modulator driver applications

Author

Virk, R.S. ; Camargo, E. ; Hajji, R. ; Parker, S. ; Benelbar, R. ; Notomi, S. ; Ohnishi, H.

Author_Institution

Fujitsu Compound Semicond. Inc, San Jose, CA, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

91

Abstract

This paper presents the simulated and measured performance of 50 kHz to 40 GHz distributed amplifier MMICs. The chips were fabricated in a double-doped AlGaAs/InGaAs/AlGaAs p-HEMT technology and designed using a microstrip configuration.. The driver MMIC achieves 40-GHz bandwidth and provides 6.6 V/sub p-p/ which is ideal for lithium niobate optical modulator driver applications.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; distributed amplifiers; driver circuits; electro-optical modulation; field effect MMIC; gallium arsenide; indium compounds; optical communication equipment; 40 GHz; 50 kHz to 40 GHz; 6.6 V; AlGaAs-InGaAs-AlGaAs; LiNbO/sub 3/; compressed operation; distributed amplifier MMICs; double-doped AlGaAs/InGaAs/AlGaAs p-HEMT technology; linear operation; microstrip configuration; optical modulator driver; output eye amplitudes; Bandwidth; Distributed amplifiers; Driver circuits; Indium gallium arsenide; Lithium niobate; MMICs; Microstrip; Optical modulation; Semiconductor device measurement; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011566

Filename

1011566