Intermodulation distortion behavior in LDMOS transistor amplifiers

Author

Fager, Christian ; de Carvalho, N.B. ; Pedro, J.C. ; Zirath, H.

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

131

Abstract

An analysis of the intermodulation distortion (IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining the measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the IMD behavior also at higher frequency.

Keywords

MOSFET circuits; UHF power amplifiers; intermodulation distortion; nonlinear network analysis; 1900 MHz; 28 V; IMD behavior; LDMOS power amplifier; LDMOS transistor amplifiers; class AB operation; class C operation; intermodulation distortion behavior; linearity requirements; low frequency two-tone measurements; sweet-spots; turn-on region abruptness; Distortion measurement; Frequency measurement; Intermodulation distortion; Linearity; MESFETs; Microwave amplifiers; Microwave transistors; Power amplifiers; Transfer functions; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011576

Filename

1011576