Title :
Modeling of frequency dependent losses in two-port and three-port inductors on silicon
Author :
Kamgaing, T. ; Myers, T. ; Petras, M. ; Miller, M.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
New compact model forms for two-port and three-port symmetric inductors fabricated on silicon are discussed in this paper. These new models incorporate a frequency independent RL network that mimics the skin effect behavior of transmission lines on conductive substrates and can accurately predict the inductive behavior as well as the one-port single-ended and the one-port differential Q of these devices at microwave and millimeter wave frequencies. The new models are validated on inductors fabricated in a thick plated copper process.
Keywords :
MIMIC; MMIC; Q-factor; inductors; integrated circuit modelling; losses; lumped parameter networks; multiport networks; skin effect; two-port networks; Cu; Si; compact model forms; conductive substrates; frequency dependent losses modeling; frequency independent RL network; frequency independent lumped elements; inductive behavior; microwave frequencies; millimeter wave frequencies; one-port differential Q; one-port single-ended Q; silicon; skin effect behavior; thick plated copper process; three-port symmetric inductors; transmission lines; two-port symmetric inductors; Conductors; Frequency dependence; Impedance; Inductance; Inductors; Q factor; Scattering parameters; Silicon; Skin effect; Transmission lines;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011582
