DocumentCode
1829665
Title
Dishing study of polyimide CMP process
Author
Mao, Yingjun ; Chen, Gim Guan ; Murthy, Ramana ; Tan, Eugene ; Loh, Woon Leng
Author_Institution
Inst. of Microelectron., A*STAR, (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
810
Lastpage
812
Abstract
Polyimide is the promising material as inter-dielectric due to its outstanding properties. This paper reports polyimide CMP process and studies the dishing performance over different structures on different wafer locations. 8 inch silicon test wafers were patterned with different structures after SiO2 deposition, etching and polyimide coating. Then CMP polished wafers by changing recipe parameters to get variable dishing performance. Final results showed better and more stable dishing performance with better uniformity when T.R. pressure = 150 and slurry dilution = 50%. And narrower structures have much lower dishing.
Keywords
chemical mechanical polishing; etching; polymers; silicon compounds; SiO2; deposition process; dishing performance; dishing study; etching process; polyimide CMP process; polyimide coating; silicon test wafers; size 8 in; wafer location; Coatings; Electronics packaging; Etching; Polyimides; Silicon; Slurries; CMP process; dishing; polyimide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location
Singapore
Print_ISBN
978-1-4577-1983-7
Electronic_ISBN
978-1-4577-1981-3
Type
conf
DOI
10.1109/EPTC.2011.6184524
Filename
6184524
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