High quality factor and high self-resonant frequency monolithic inductor for millimeter-wave Si-based IC´s

Author

Dubuc, D. ; Tournier, E. ; Telliez, I. ; Parra, T. ; Boulanger, C. ; Graffeuil, J.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

193

Abstract

Substrate losses of inductors realized with a SiGe BICMOS technology (psubstrate=15 /spl Omega/cm) are investigated. The benefit of introducing a thin conductive (p=0.5 /spl Omega/cm) epitaxial layer below the oxide beneath metal strip in order to obtain a high quality factor and a high self-resonant frequency (SRF) is demonstrated. Finally, measurements of the newly developed inductor show a high quality factor of 22 at 30 GHz with the conductive epitaxial layer connected to ground. Moreover, an impressive measured SRF of 64 GHz is achieved for an inductor value of 0.75 nH.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; Q-factor; inductors; semiconductor materials; 30 GHz; 64 GHz; SiGe; SiGe BiCMOS technology; conductive epitaxial layer; millimeter-wave IC; monolithic inductor; quality factor; self-resonant frequency; substrate loss; BiCMOS integrated circuits; Conductivity measurement; Epitaxial layers; Frequency; Germanium silicon alloys; Inductors; Q factor; Silicon germanium; Strips; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011591

Filename

1011591