DocumentCode
1829760
Title
Two-port type ferromagnetic RF integrated inductor
Author
Yarnaguchi, M. ; Kuribara, T. ; Arai, K.-I.
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Volume
1
fYear
2002
fDate
2-7 June 2002
Firstpage
197
Abstract
Two-port type rf integrated inductor with on-top magnetic layer was fabricated. Equivalent circuit analysis of the ferromagnetic RF integrated inductor was performed for the first time. Structure of the possible equivalent circuit is proposed. Parasitic capacitance of the ferromagnetic film is negligibly small if the film is applied slits. Ferromagnetic Co/sub 85/Nb/sub 12/Zr/sub 3/ film with slits effectively enhanced the inductance up to 5 GHz.
Keywords
cobalt alloys; equivalent circuits; ferromagnetic materials; inductors; magnetic thin film devices; niobium alloys; zirconium alloys; 5 GHz; Co/sub 85/Nb/sub 12/Zr/sub 3/; Co/sub 85/Nb/sub 12/Zr/sub 3/ film; equivalent circuit; magnetic layer; parasitic capacitance; two-port ferromagnetic RF integrated inductor; Circuit analysis; Equivalent circuits; Inductors; Magnetic analysis; Magnetic films; Niobium; Parasitic capacitance; Performance analysis; Radio frequency; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1011592
Filename
1011592
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