RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics

Author

Chen, S.B. ; Lai, C.H. ; Chin, A. ; Hsieh, J.C. ; Liu, J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

201

Abstract

Record high capacitance density of 0.5 and 1.0 /spl mu/F/cm/sup 2/ are obtained for Al/sub 2/O/sub 3/ and AlTiO/sub x/ MIM capacitors respectively, with loss tangent <0.01 and process compatible to existing VLSI back-end integration. However, the AlTiO/sub x/ MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al/sub 2/O/sub 3/ MIM capacitor has good device integrity of low leakage current of 4.3/spl times/10/sup -8/ A/cm/sup 2/, small frequency-dependent capacitance reduction, and good reliability.

Keywords

MIM devices; alumina; aluminium compounds; capacitors; dielectric losses; leakage currents; permittivity; titanium compounds; Al/sub 2/O/sub 3/; AlTiO; AlTiO/sub x/; RF MIM capacitor; VLSI back-end integration; capacitance density; high-K dielectric; leakage current; loss tangent; reliability; Artificial intelligence; Capacitance; Capacitance-voltage characteristics; Dielectrics; Frequency measurement; Leakage current; MIM capacitors; Radio frequency; Stress; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011593

Filename

1011593