DocumentCode :
1829793
Title :
Performance analysis of monolithic RF transformers by experimental characterization
Author :
Kamgaing, T. ; Myers, T. ; Feng Ling ; Petras, M. ; Miller, M. ; Ramahi, O.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Volume :
1
fYear :
2002
fDate :
2-7 June 2002
Firstpage :
205
Abstract :
Electrical performances of 4-port n:n dual-spiral transformers fabricated in a thick plated copper on silicon process are analyzed. Multiport data analysis techniques and compact modeling are used to study the relationships between the physical and the electrical attributes of the devices. Analytical models, based on measurements from 50 MHz to 20 GHz, are used to explore achievable device performance under different design constraints.
Keywords :
high-frequency transformers; 50 MHz to 20 GHz; Cu; Si; analytical model; copper plating; electrical characteristics; four-port dual-spiral transformer; monolithic RF transformer; multiport data analysis; silicon substrate; Copper; Inductance; Mutual coupling; Performance analysis; Radio frequency; Radiofrequency integrated circuits; Scattering parameters; Silicon; Spirals; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7239-5
Type :
conf
DOI :
10.1109/MWSYM.2002.1011594
Filename :
1011594
Link To Document :
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