Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

Author

Going, Ryan W. ; Loo, Jonathan ; Tsu-Jae King Liu ; Wu, Ming C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA

Volume

20

Issue

4

fYear

2014

fDate

July-Aug. 2014

Firstpage

1

Lastpage

7

Abstract

This paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/drain activation anneal step. The resulting device, with 1-μm channel length, and 8-μm channel width, demonstrates a responsivity of over 18 A/W at 1550 nm with 583 nW of incident light. By increasing the incident power to 912 μW, the device operates at 2.5 GHz. Miniaturization is expected to improve both responsivity and speed in future devices.

Keywords

MOSFET; elemental semiconductors; germanium; integrated optoelectronics; melting; optical fabrication; optical waveguide components; photodetectors; phototransistors; recrystallisation annealing; semiconductor growth; silicon-on-insulator; Ge; SOI substrate; Si; drain activation anneal step; frequency 2.5 GHz; germanium gate photoMOSFET integration; germanium gated NMOS phototransistor; incident light; phototransistor fabricatION; power 583 nW; power 919 muW; rapid melt growth; recrystallization; silicon photonics; silicon-on-insulator substrate; size 1 mum; size 8 mum; source activation anneal step; wavelength 1550 nm; Capacitance; Germanium; Logic gates; Optical waveguides; Photodiodes; Silicon; Transistors; Phototransistors; optical interconnections; optical waveguide components; optoelectronic devices; photodetectors;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2294470

Filename

6680616