Low frequency noise characterization and modeling of microwave bipolar devices: application to the design of low phase noise oscillator

Author

Bary, L. ; Cibiel, G. ; Telliez, I. ; Rayssac, J. ; Rennane, A. ; Boulanger, C. ; Llopis, O. ; Borgarino, M. ; Plana, R. ; Graffeuil, J.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

275

Abstract

This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results have been implemented into a nonlinear Gummel Poon model which has been validated through the design of a DRO made of an integrated SiGe negative resistance in the 10 GHz range. We have obtained phase noise of -105 dBc/Hz at 10 kHz offset, which is close to the state of the art, and we have demonstrated a design technique that provides an accurate phase noise prediction.

Keywords

Ge-Si alloys; dielectric resonator oscillators; heterojunction bipolar transistors; microwave bipolar transistors; negative resistance devices; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 10 GHz; SiGe; SiGe HBT; design technique; dielectric resonator oscillator; low-frequency noise; microwave bipolar device; negative resistance; nonlinear Gummel-Poon model; phase noise; Electrical resistance measurement; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave oscillators; Noise measurement; Phase noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011610

Filename

1011610