Title :
SiGe/Si power HBTs for X- to K-band applications
Author :
Mohammadi, S. ; Zhenqiang Ma ; Jaehoon Park ; Bhattacharya, P. ; Katehi, L.P.B. ; Ponchak, G.E. ; Alterovitz, S.A. ; Strohm, K.M. ; Luy, J.-F.
Author_Institution :
EECS Dept., Michigan Univ., Ann Arbor, MI, USA
Abstract :
High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) have been demonstrated. Under continuous wave operation, a single 20-finger Si/Si/sub 0.75/Ge/sub 0.25//Si (emitter area of 1200 /spl mu/m/sup 2/) HBT, biased in class AB, delivers 28.5 dBm (700 mW) of RF output power at X-band, 25.5 dBm (350 mW) at Ku-band and 22.5 dBm (180 mW) at K-band. These represent the state-of-the-art power performance of SiGe-based HBTs at frequencies above X-band. An in-depth analysis of the power performance of HBTs with different geometry and configuration is also presented, which will eventually serve as a design guide for SiGe/Si power HBTs at different operating frequencies.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; semiconductor device measurement; semiconductor materials; silicon; 12.6 GHz; 18 GHz; 180 mW; 350 mW; 700 mW; 8.4 GHz; K-band applications; Ku-band applications; RF output power; Si-Si/sub 0.75/Ge/sub 0.25/-Si; Si-SiGe; SiGe-based HBTs; SiGe/Si power HBTs; X-band applications; class AB biasing; continuous wave operation; device configuration; device design guide; device geometry; emitter dimensions; heterojunction bipolar transistors; microwave power HBTs; multi-finger HBTs; operating frequencies; power characteristics measurement; power performance analysis; CMOS technology; Fingers; Gallium arsenide; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; K-band; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011614
