Title :
RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures
Author :
Matsuno, T. ; Nishii, K. ; Sonetaka, S. ; Toyoda, Y. ; Iwamoto, N.
Abstract :
The collector profile dependences of RF power characteristics of SiGe heterojunction bipolar transistors (HBT) have been studied. A selective ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio (ACPR) characteristics for middle class power at around an output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BV/sub CEO/ of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available for fabrication of multi-stage RF power amplifiers on one chip by a single process.
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; ion implantation; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor materials; 5 V; 9 V; ACPR characteristics; RF power characteristics; SIC structure; SiGe; SiGe HBTs; SiGe heterojunction bipolar transistors; adjacent-channel-power-ratio characteristics; collector doping; collector profile dependences; collector thickness; high breakdown voltage structures; middle class power output; multi-stage RF power amplifier; selectively ion implanted collector structure; single process chip fabrication; Breakdown voltage; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Power transistors; Radio frequency; Silicon carbide; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011615
