Observation of fluorescence in the THz frequency region from semi-insulating bulk GaAs excited by ultrashort pulses

Author

Sarukura, Nobuhiko ; Liu, Zhenlin ; Segawa, Yusaburo ; Koshihara, Shin Ya ; Kondo, Yasuhiro

Author_Institution

Photodynamics Res. Center, Inst. of Phys. & Chem. Res., Sendai, Japan

fYear

1994

fDate

25-29 Jul 1994

Firstpage

248

Lastpage

250

Abstract

THz radiation from various material excited by ultrashort pulse lasers have been intensively studied in the respect of its mechanism and potential application to ultrafast opto-electronics. Especially quantum well sample applied with electrical field was found out to be quite efficient. In this presentation, we will describe the observation of THz radiation not due to the rectification from semi-insulating bulk GaAs excited by ultrashort-laser pulses and its intensity dependence on the 1.5-th power of the excitation intensity

Keywords

III-V semiconductors; fluorescence; gallium arsenide; high-speed optical techniques; laser beam effects; semiconductor quantum wells; GaAs; THz radiation; excitation intensity; fluorescence; intensity dependence; quantum well; rectification; ultrafast opto-electronics; ultrashort-laser pulses; Absorption; Chemical technology; Fluorescence; Frequency; Gallium arsenide; Laser excitation; Optical pulses; Power lasers; Quantum well lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1473-5

Type

conf

DOI

10.1109/NLO.1994.470823

Filename

470823