Title :
Observation of fluorescence in the THz frequency region from semi-insulating bulk GaAs excited by ultrashort pulses
Author :
Sarukura, Nobuhiko ; Liu, Zhenlin ; Segawa, Yusaburo ; Koshihara, Shin Ya ; Kondo, Yasuhiro
Author_Institution :
Photodynamics Res. Center, Inst. of Phys. & Chem. Res., Sendai, Japan
Abstract :
THz radiation from various material excited by ultrashort pulse lasers have been intensively studied in the respect of its mechanism and potential application to ultrafast opto-electronics. Especially quantum well sample applied with electrical field was found out to be quite efficient. In this presentation, we will describe the observation of THz radiation not due to the rectification from semi-insulating bulk GaAs excited by ultrashort-laser pulses and its intensity dependence on the 1.5-th power of the excitation intensity
Keywords :
III-V semiconductors; fluorescence; gallium arsenide; high-speed optical techniques; laser beam effects; semiconductor quantum wells; GaAs; THz radiation; excitation intensity; fluorescence; intensity dependence; quantum well; rectification; ultrafast opto-electronics; ultrashort-laser pulses; Absorption; Chemical technology; Fluorescence; Frequency; Gallium arsenide; Laser excitation; Optical pulses; Power lasers; Quantum well lasers; Surface emitting lasers;
Conference_Titel :
Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1473-5
DOI :
10.1109/NLO.1994.470823
