Observation of intensity-dependent excitonic emission linewidth broadening in periodic asymmetric coupled three narrow quantum wells

Author

Ding, Y.J. ; Cui, A.G. ; Lee, S.J. ; Veliadis, J.V.D. ; Khurgin, J.B. ; Li, S. ; Katzer, D.S.

Author_Institution

Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA

fYear

1994

fDate

25-29 Jul 1994

Firstpage

236

Lastpage

238

Abstract

By taking the advantage of an extremely narrow excitonic emission linewidth in a sample of periodic asymmetric coupled three narrow quantum wells, we report our first observation of the broadening of the photoluminescence excitonic linewidth under the low excitation intensities: 0.54 W/cm²-1.6 kW/cm² at low temperature. The sample was grown by MBE on a semi-insulating GaAs substrate. The expitaxial layers consist of 10 periods, each of which is composed of three narrow asymmetric coupled GaAs quantum wells with the designed thicknesses of45 Å, 30 Å, and 50 Å coupled by 40 Å Al_0.3Ga_0.7As barriers. We measured photoluminescence excitation spectra in the temperature range of4 K - 300 K

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor quantum wells; spectral line breadth; spectral line broadening; 30 A; 4 to 300 K; 40 A; 45 A; 50 A; GaAs-Al_0.3Ga_0.7As-GaAs; excitonic emission linewidth broadening; expitaxial layers; intensity-dependence; periodic asymmetric coupled three narrow quantum wells; photoluminescence excitation spectra; Absorption; Energy measurement; Excitons; Gallium arsenide; Particle measurements; Photoluminescence; Plasma temperature; Quantum computing; Radiative recombination; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1473-5

Type

conf

DOI

10.1109/NLO.1994.470824

Filename

470824