DocumentCode
1830462
Title
Theory of anisotropy of two-photon absorption in zinc-blende semiconductors
Author
Hutchings, D.C. ; Wherrett, B.S.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1994
fDate
25-29 Jul 1994
Firstpage
230
Lastpage
232
Abstract
Two-photon absorption (2PA) in semiconductors is of interest as it provides a nonlinear spectroscopic technique in addition to having important consequences for all-optical switching. Earlier calculations and measurements of 2PA in zinc-blende semiconductors have concentrated on the linearly polarised single-beam case, that is ignoring any polarisation dependence. This polarisation dependence can take two forms. First, there is a dependence on the type of optical polarisation employed that in the single beam case gives a difference between linearly and circularly polarised light. This variation can occur even for isotropic media. Second, there is a variation in the 2PA coefficient depending on the relative orientation of the optical polarisation with the crystalline axes which will be the main topic of this paper
Keywords
light absorption; nonlinear optics; optical saturable absorption; optical switches; semiconductor materials; two-photon processes; all-optical switching; nonlinear spectroscopic technique; optical polarisation; relative orientation; two-photon absorption anisotropy; zinc-blende semiconductors; Absorption; Anisotropic magnetoresistance; Crystallization; Gallium arsenide; Nonlinear optics; Optical polarization; Optical refraction; Physics; Temperature dependence; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE
Conference_Location
Waikoloa, HI
Print_ISBN
0-7803-1473-5
Type
conf
DOI
10.1109/NLO.1994.470826
Filename
470826
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