• DocumentCode
    1830462
  • Title

    Theory of anisotropy of two-photon absorption in zinc-blende semiconductors

  • Author

    Hutchings, D.C. ; Wherrett, B.S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • fYear
    1994
  • fDate
    25-29 Jul 1994
  • Firstpage
    230
  • Lastpage
    232
  • Abstract
    Two-photon absorption (2PA) in semiconductors is of interest as it provides a nonlinear spectroscopic technique in addition to having important consequences for all-optical switching. Earlier calculations and measurements of 2PA in zinc-blende semiconductors have concentrated on the linearly polarised single-beam case, that is ignoring any polarisation dependence. This polarisation dependence can take two forms. First, there is a dependence on the type of optical polarisation employed that in the single beam case gives a difference between linearly and circularly polarised light. This variation can occur even for isotropic media. Second, there is a variation in the 2PA coefficient depending on the relative orientation of the optical polarisation with the crystalline axes which will be the main topic of this paper
  • Keywords
    light absorption; nonlinear optics; optical saturable absorption; optical switches; semiconductor materials; two-photon processes; all-optical switching; nonlinear spectroscopic technique; optical polarisation; relative orientation; two-photon absorption anisotropy; zinc-blende semiconductors; Absorption; Anisotropic magnetoresistance; Crystallization; Gallium arsenide; Nonlinear optics; Optical polarization; Optical refraction; Physics; Temperature dependence; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    0-7803-1473-5
  • Type

    conf

  • DOI
    10.1109/NLO.1994.470826
  • Filename
    470826