A 1.5V high linearity down-conversion mixer for WiMAX applications

Author

Wei, Hung-Che ; Weng, Ro-Min ; Wang, Jing-Chyi

Author_Institution

Dept. of Electron. Commun. Eng., Nat. Kaohsiung Marine Univ., Kaohsiung, Taiwan

Volume

2

fYear

2010

fDate

1-3 Aug. 2010

Abstract

This paper presents a CMOS RF down-conversion mixer for WiMAX applications. The proposed mixer adopts the tansconductance linearization technique realized by using the compound FETs. The mixer with the optimum linearity is suitable for the RF front-end system design. The simulation results reveal that the proposed mixer possesses power conversion gain of 0.44 dB, input third-order intercept point (IIP3) 10 dBm, input 1-dB compression point (P_-1dB) -9.8 dBm, and single side-band noise figure (SSB NF) 11.4 dB. The mixer implemented by tsmc 0.18 μm CMOS process consumes 3.02 mA of current from a 1.5 V power supply.

Keywords

CMOS integrated circuits; UHF frequency convertors; UHF mixers; WiMax; CMOS RF down-conversion mixer; RF front-end system design; WiMAX applications; compound FET; gain 0.44 dB; high linearity down-conversion mixer; input compression point; input third-order intercept point; noise figure 11.4 dB; power conversion gain; simulation; single side-band noise figure; transconductance linearization technique; voltage 1.5 V; CMOS integrated circuits; Compounds; Mixers; Radio frequency; Solids; WiMAX; CMOS; WiMAX; linearity; mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanical and Electronics Engineering (ICMEE), 2010 2nd International Conference on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-7479-0

Electronic_ISBN

978-1-4244-7481-3

Type

conf

DOI

10.1109/ICMEE.2010.5558414

Filename

5558414