DocumentCode :
1830712
Title :
Miniaturized and broadband V-band balanced frequency doubler for highly integrated 3-D MMIC
Author :
Nishikawa, K. ; Piernas, B. ; Nakagawa, T. ; Araki, K.
Author_Institution :
NTT Network Innovation Labs., Yokosuka, Japan
Volume :
1
fYear :
2002
fDate :
2-7 June 2002
Firstpage :
351
Abstract :
This paper presents a compact V-band balanced frequency doubler 3-D MMIC with broadband performance. The MMIC was fabricated by combining a commercial 0.15 /spl mu/m GaAs pHEMT technology with the 3-D MMIC technology. A fabricated frequency doubler MMIC, which occupies 0.92 mm/sup 2/, achieves 2.5-dBm output power and more than 15-dB fundamental signal suppression over 50-GHz to 68-GHz (30% bandwidth) for an 8-dBm input signal. A transmit MMIC, intended for 50-GHz application, realizes a 10-dBm output power and 40-dB isolation in an area of 1.48 mm/sup 2/, it is supported by input and output buffer amplifiers. These fabricated MMICs are very effective in realizing compact and highly integrated single-chip transceiver MMICs. Furthermore, they can be re-used for various V-band applications, resulting in significant cost reduction.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; frequency multipliers; gallium arsenide; 0.15 micron; 3D MMIC; 50 to 68 GHz; GaAs; GaAs pHEMT technology; broadband V-band balanced frequency doubler; buffer amplifier; single-chip transceiver; transmit MMIC; Bandwidth; Couplers; Frequency; Gallium arsenide; Impedance matching; Laboratories; MMICs; Power amplifiers; Power generation; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7239-5
Type :
conf
DOI :
10.1109/MWSYM.2002.1011628
Filename :
1011628
Link To Document :
بازگشت