• DocumentCode
    1830942
  • Title

    Bifurcations in a silicon neuron

  • Author

    Basu, Arindam ; Petre, Csaba ; Hasler, Paul

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    428
  • Lastpage
    431
  • Abstract
    In this paper, we describe the bifurcations occurring in a silicon neuron with one sodium and one potassium channel. The channels are designed to model the physics of ion flow in actual biological channels instead of modeling a particular set of equations. We show a pair of subcritical Hopf-bifurcation with increase in current stimulus which is characteristic of class 2 excitability in Hodgkin-Huxley neurons. Theoretical analysis of the bifurcations lead to conditions for designing and biasing the circuit. The circuit is very compact, comprising six transistors and three capacitors, lending itself to easy integration. The parameters are set using floating-gate transistors and can be programmed as desired. We hope to study more complicated dynamics of large networks of these neurons, a task which might be beyond a typical digital computer.
  • Keywords
    bifurcation; neural nets; Hodgkin-Huxley neuron; biological channels; floating-gate transistor; ion flow physics; potassium channel; silicon neuron bifurcations; sodium channel; subcritical Hopf bifurcation; Bifurcation; Biological system modeling; Biology computing; Capacitors; Circuits; MOSFETs; Neurons; Nonlinear equations; Physics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541446
  • Filename
    4541446