DocumentCode
1830942
Title
Bifurcations in a silicon neuron
Author
Basu, Arindam ; Petre, Csaba ; Hasler, Paul
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2008
fDate
18-21 May 2008
Firstpage
428
Lastpage
431
Abstract
In this paper, we describe the bifurcations occurring in a silicon neuron with one sodium and one potassium channel. The channels are designed to model the physics of ion flow in actual biological channels instead of modeling a particular set of equations. We show a pair of subcritical Hopf-bifurcation with increase in current stimulus which is characteristic of class 2 excitability in Hodgkin-Huxley neurons. Theoretical analysis of the bifurcations lead to conditions for designing and biasing the circuit. The circuit is very compact, comprising six transistors and three capacitors, lending itself to easy integration. The parameters are set using floating-gate transistors and can be programmed as desired. We hope to study more complicated dynamics of large networks of these neurons, a task which might be beyond a typical digital computer.
Keywords
bifurcation; neural nets; Hodgkin-Huxley neuron; biological channels; floating-gate transistor; ion flow physics; potassium channel; silicon neuron bifurcations; sodium channel; subcritical Hopf bifurcation; Bifurcation; Biological system modeling; Biology computing; Capacitors; Circuits; MOSFETs; Neurons; Nonlinear equations; Physics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541446
Filename
4541446
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