A charge-pump based 0.35-um CMOS RF switch driver for multi-standard operations

Author

Cha, Jeongwon ; Ahn, Minsik ; Cho, Changhyuk ; Lee, ChangHo ; Laskar, Joy

Author_Institution

Georgia Inst. of Technol., Atlanta, GA

fYear

2008

fDate

18-21 May 2008

Firstpage

452

Lastpage

455

Abstract

A novel RF switch driver for high-power wireless applications is presented. The switch driver employs a novel structure of a charge pump to generate up-converted voltage to ensure linearity of an antenna switch made of GaAs p-HEMT technology. The novel charge pump can generate up-converted voltage that is higher than that of conventional charge pumps by using a parallel structure and PMOS body bias technique. The proposed switch driver was fabricated using a 0.35-um standard CMOS technology. The up-converted voltage reaches up to 8.6 V with 3 V-supply voltage and less than 30 mV of ripple. The size of the chip is less than 0.12 mm .

Keywords

CMOS integrated circuits; HEMT integrated circuits; III-V semiconductors; driver circuits; radio networks; switching circuits; CMOS RF switch driver; GaAs; PMOS body bias technique; antenna switch; charge-pumps; high-power wireless applications; multistandard operations; p-HEMT technology; parallel structure; voltage 3 V; CMOS technology; Charge pumps; Circuits; Communication switching; DC-DC power converters; Diodes; Linearity; Radio frequency; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on

Conference_Location

Seattle, WA

Print_ISBN

978-1-4244-1683-7

Electronic_ISBN

978-1-4244-1684-4

Type

conf

DOI

10.1109/ISCAS.2008.4541452

Filename

4541452