Title :
A 12mW all-digital PLL based on class-F DCO for 4G phones in 28nm CMOS
Author :
Feng-Wei Kuo ; Ron Chen ; Yen, Kyle ; Hsien-Yuan Liao ; Chewn-Pu Jou ; Fu-Lung Hsueh ; Babaie, Masoud ; Staszewski, Robert Bogdan
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
We propose a new architecture of an all-digital PLL (ADPLL) for advanced cellular radios that is optimized for 28 nm CMOS. It is based on a wide tuning range, fine-resolution class-F DCO with only switchable metal capacitors and a phase-predictive TDC. The 8mW DCO emits -157 dBc/Hz at 20MHz offset at ~2 GHz, while fully satisfying metal density rules. The 0.4mW TDC clocked at 40MHz achieves PVT-stabilized 6 ps resolution for -108 dBc/Hz in-band phase noise. FREF spur is ultra-low at <;-94 dBc. The ADPLL supports a 2-point modulation and consumes 12mW while occupying 0.22mm2, thus demonstrating both 72% power and 38% area reductions over prior records.
Keywords :
4G mobile communication; CMOS digital integrated circuits; cellular radio; digital phase locked loops; phase noise; 2-point modulation; 4G phones; ADPLL architecture; CMOS process; FREF spur; PVT-stabilized resolution; TDC; advanced cellular radios; all-digital PLL; class-F DCO; digitally controlled oscillator; in-band phase noise; metal density rules; phase-predictive TDC; power 0.4 mW; power 12 mW; power 8 mW; size 28 nm; switchable metal capacitors; time 6 ps; wide tuning range fine-resolution class-F DCO; CMOS integrated circuits; Frequency modulation; Metals; Phase locked loops; Phase noise; Tuning;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3327-3
DOI :
10.1109/VLSIC.2014.6858393