Title :
Intercept point behavior of Ka-band GaAs high power amplifiers
Author :
Merkle, Thomas ; Tessmann, A. ; Ramberger, S.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
Abstract :
Intermodulation distortion (IMD) and output intercept point (OIP) behavior due to output power saturation, thermal effects and bias conditions were Investigated for AlGaAsAs/InGaAs/GaAs pHEMT power amplifiers at Ka-Band frequencies. A power amplifier with a chip size of 3.3 mm/sup 2/ and a saturated output power of more than 27 dBm from 37-41 GHz, and a 3 mm/sup 2/ high gain compact dual-gate power amplifier with an output power saturation of 27 dBm at 35 GHz were designed. Intermodulation distortion for these two power amplifiers was compared. In order to separate fundamental effects from measurement Induced phenomena, the principle accuracy of multi-tone measurement systems that are based on scalar spectrum analyzers was reviewed.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit measurement; intermodulation distortion; microwave measurement; millimetre wave power amplifiers; spectral analysers; 35 GHz; 37 to 41 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs; Ka-band; bias conditions; compact dual-gate power amplifier; high power amplifiers; intercept point behavior; intermodulation distortion; measurement induced phenomena; multi-tone measurement systems; output power saturation; pHEMT power amplifiers; saturated output power; scalar spectrum analyzers; thermal effects; Distortion measurement; Frequency; Gallium arsenide; High power amplifiers; Indium gallium arsenide; Intermodulation distortion; PHEMTs; Power amplifiers; Power generation; Spectral analysis;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011653
