Title :
ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing
Author :
Li-Yue Huang ; Meng-Fan Chang ; Ching-Hao Chuang ; Chia-Chen Kuo ; Chien-Fu Chen ; Geng-Hau Yang ; Hsiang-Jen Tsai ; Tien-Fu Chen ; Shyh-Shyuan Sheu ; Keng-Li Su ; Chen, F.T. ; Tzu-Kun Ku ; Ming-Jinn Tsai ; Ming-Jer Kao
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
This study proposes an RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) to 1) suppress match-line (ML) leakage current from match cells (IML-M), 2) reduce ML parasitic load (CML), 3) decouple NVM-stress from wordlength (WDL) and IML-MIS. RCSD reduces NVM-stress by 7+x, and achieves a 4+x improvement in speed-WDL-capacity-product. A 128×32b RCSD nvTCAM macro was fabricated using HfO ReRAM and an 180nm CMOS. This paper presents the first ReRAM-based nvTCAM featuring the shortest (1.2ns) search delay (TSD) among nvTCAMs with WDL≥32b.
Keywords :
Big Data; CMOS memory circuits; RC circuits; content-addressable storage; hafnium compounds; high-k dielectric thin films; leakage currents; random-access storage; search engines; stress analysis; 7x NVM-stress reduction; Big-Data processing; CMOS process; HfO; ML parasitic load reduction; RC-filtered stress-decoupled 4T2R nonvolatile TCAM; RCSD nvTCAM macro; ReRAM-based 4T2R nonvolatile TCAM; match-line leakage current supression; normally-off instant-on filter-based search engines; size 180 nm; speed-WDL-capacity-product; speed-wordlength-capacity; ternary content-addressable-memory; DSL; Delays; Nonvolatile memory; Search engines; Stress; Very large scale integration; Wireless sensor networks;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3327-3
DOI :
10.1109/VLSIC.2014.6858404
