Integration of GaAs 4 kbit memory with 750-gate logic for digital RF memory applications

Author

White, W. ; Taddiken, A. ; Shichijo, H. ; Vernon, M.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

37

Lastpage

40

Abstract

An integrated memory/logic GaAs chip designed for digital RF memory (DRFM) applications is described. Using the distributed control approach, a 750-gate logic function, including demultiplexing, multiplexing, address generation, and control circuitry, is integrated with 4 kb of on-chip static RAM. A string of these chips is the digital equivalent of a variable-length delay line. This chip, called a programmable delay line element, implements the basic DRFM storage and delay functions.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated logic circuits; integrated memory circuits; random-access storage; 4 kbit; DRFM storage; GaAs; MESFET process; address generation; control circuitry; delay functions; demultiplexing; digital RF memory applications; distributed control; integrated memory/logic GaAs chip; multiplexing; onchip SRAM; programmable delay line element; static RAM; variable-length delay line; Circuits; Delay lines; Demultiplexing; Distributed control; Gallium arsenide; Logic design; Logic functions; Radio frequency; Random access memory; Read-write memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69288

Filename

69288