R-processor: 0.4V resilient processor with a voltage-scalable and low-overhead in-situ error detection and correction technique in 65nm CMOS

This paper presents a design approach for upgrading the resiliency of ultra-low-voltage (ULV) microprocessors through a voltage-scalable and low-overhead in-situ error detection and correction (EDAC) technique. Particular efforts are made to overcome the poor voltage scalability and area/energy/throughput overhead of the existing EDAC techniques when applied to ULV designs. The 0.4 V, 16 b microprocessor employing the proposed EDAC and dynamic frequency scaling schemes is demonstrated in 65 nm. The microprocessor can (1) automatically modulate fCLK based on error flags across static/slow variations and (2) in-situ detect and correct the errors from fast dynamic variations, virtually eliminating timing margins. At a typical process/voltage/temperature (PVT) corner, the proposed design achieves 4.9× throughput and 59% energy efficiency improvement at only 9.5% area overhead over the baseline design under the worst-case timing margin.