Title :
Development and verification of a new non-linear MOSFET model
Author :
Romdane, H. ; Bergeault, E. ; Huyart, B.
Author_Institution :
Dept. COMELEC, Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
A new non-linear model of Si MOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.
Keywords :
MOSFET; S-parameters; semiconductor device models; DC characteristics; Si; Si MOSFET; interpolation; lookup table; nonlinear model; small-signal scattering parameters; Circuit simulation; Electrical resistance measurement; Equivalent circuits; MOSFET circuits; Nonlinear equations; Radio frequency; Roentgenium; Scattering parameters; Semiconductor device modeling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011691
