Title :
Design and analysis of a multi-layer transformer balun for silicon RF integrated circuits
Author :
Yang, H.Y.D. ; Zhang, L. ; Castaneda, J.A.
Author_Institution :
Broadcom Corp., El Segundo, CA, USA
Abstract :
In this paper, we present the design and analysis of an on-chip transformer balun for silicon RFIC. Both the primary and secondary spread over four metal layers along a common symmetric axis to reduce the overall area maintaining reasonable quality factor. A five port transformer balun circuit model is developed to facilitate the device simulation. A 4:11 transformer balun is fabricated and test. It is ideal for LNA to enhance the gain with optimum noise figure.
Keywords :
Q-factor; baluns; elemental semiconductors; high-frequency transformers; monolithic integrated circuits; silicon; LNA; Si; five-port circuit model; gain; multi-layer transformer balun; noise figure; quality factor; silicon RF integrated circuit; Circuit simulation; Circuit testing; Costs; Impedance matching; Noise figure; Q factor; Radio frequency; Radiofrequency integrated circuits; Signal design; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011692
