Smoothing gate capacitance models for CMOS radio frequency and microwave integrated circuits CAD

Author

Dobes, J.

Author_Institution

Czech Tech. Univ., Prague, Czech Republic

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

605

Abstract

Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. An idea for exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer´s model at zero drain-source voltage. The updated model is tested on a flip-flop circuit by an advanced algorithm.

Keywords

CMOS integrated circuits; SPICE; capacitance; circuit CAD; field effect MMIC; flip-flops; integrated circuit design; integrated circuit modelling; smoothing methods; CMOS RFIC CAD; CMOS microwave integrated circuit CAD; MOSFET gate capacitances; Meyer model discontinuity; SPICE3 program; charge-controlled models; circuit interactive analyzer program; convergence problems; flip-flop circuit; model discontinuity exponential smoothing; smoothing gate capacitance models; voltage-controlled models; zero drain-source voltage; CMOS integrated circuits; Capacitance; Flip-flops; Integrated circuit modeling; Microwave integrated circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Smoothing methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011693

Filename

1011693