Title :
High-power semiconductor optical amplifier
Author_Institution :
Nanotechnology Research Center, Fujitsu Laboratories LTD., Japan
Abstract :
▪ High-Power Semiconductor Optical Amplifier ▪ High-power, polarization-insensitive SOA with different structure ▪ bulk: suitable for production due to small strain & large tolerance in width control ▪ QW: highest Psatf of +20 dBm & low PDG in wide wavelength range ▪ QD: at developing stage but potential for pattern-effect-free amplification ▪ High-power, polarization-insensitive SOA with GaInNAs / InP ▪ low-gain-tilt and potential for high-power, polarization-insensitive L-band SOA ▪ High-power, polarization-insensitive SOA module by incorporating compressively-strained-QW SOA in polarization-diversity configuration ▪ high Psatf of +22 dBm & flat gain for 4ch CWDM signals ▪ Ultra-high-power SOA with novel waveguide structure ▪ SCOWA: Watt-class SOA with low NF
Keywords :
Capacitive sensors; Indium phosphide; L-band; Noise measurement; Optical control; Optical polarization; Optical waveguides; Production; Semiconductor optical amplifiers; Strain control;
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
