High-power semiconductor optical amplifier

Author

Morito, Ken

Author_Institution

Nanotechnology Research Center, Fujitsu Laboratories LTD., Japan

fYear

2009

fDate

22-26 March 2009

Firstpage

1

Lastpage

60

Abstract

▪ High-Power Semiconductor Optical Amplifier ▪ High-power, polarization-insensitive SOA with different structure ▪ bulk: suitable for production due to small strain & large tolerance in width control ▪ QW: highest Psat^f of +20 dBm & low PDG in wide wavelength range ▪ QD: at developing stage but potential for pattern-effect-free amplification ▪ High-power, polarization-insensitive SOA with GaInNAs / InP ▪ low-gain-tilt and potential for high-power, polarization-insensitive L-band SOA ▪ High-power, polarization-insensitive SOA module by incorporating compressively-strained-QW SOA in polarization-diversity configuration ▪ high Psat^f of +22 dBm & flat gain for 4ch CWDM signals ▪ Ultra-high-power SOA with novel waveguide structure ▪ SCOWA: Watt-class SOA with low NF

Keywords

Capacitive sensors; Indium phosphide; L-band; Noise measurement; Optical control; Optical polarization; Optical waveguides; Production; Semiconductor optical amplifiers; Strain control;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

978-1-4244-2606-5

Electronic_ISBN

978-1-55752-865-0

Type

conf

Filename

5032947