A 60-GHz CMOS power amplifier with Marchand balun-based parallel power combiner

Author

Yoshihara, Y. ; Fujimoto, R. ; Ono, N. ; Mitomo, T. ; Hoshino, H. ; Hamada, M.

Author_Institution

Toshiba Corp., Semicond. Co., Kawasaki

fYear

2008

fDate

3-5 Nov. 2008

Firstpage

121

Lastpage

124

Abstract

A novel Marchand balun-based parallel power combiner suitable for a 60-GHz CMOS power amplifier is proposed. It improves the power efficiency by solving the issues of the phase difference of the signals to be combined and the low coupling factor of the on-chip balun in scaled CMOS technologies. The power amplifier using the proposed power combiner is fabricated in a 90 nm CMOS process with 1.2 V supply. Measured power gain, output referred 1-dB compression point, and saturated output power are 11.2 dB, +8.3 dBm, and +11.2 dBm, respectively, at 60-GHz.

Keywords

CMOS integrated circuits; baluns; millimetre wave amplifiers; millimetre wave integrated circuits; power amplifiers; power combiners; CMOS power amplifier; CMOS process; Marchand balun-based parallel power combiner; coupling factor; frequency 60 GHz; on-chip balun; output referred 1-dB compression point; phase difference; power efficiency; power gain; saturated output power; size 90 nm; voltage 1.2 V; CMOS process; CMOS technology; Frequency; Impedance matching; Power amplifiers; Power combiners; Power generation; Power measurement; Semiconductor optical amplifiers; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian

Conference_Location

Fukuoka

Print_ISBN

978-1-4244-2604-1

Electronic_ISBN

978-1-4244-2605-8

Type

conf

DOI

10.1109/ASSCC.2008.4708744

Filename

4708744