Title :
A 60-GHz CMOS power amplifier with Marchand balun-based parallel power combiner
Author :
Yoshihara, Y. ; Fujimoto, R. ; Ono, N. ; Mitomo, T. ; Hoshino, H. ; Hamada, M.
Author_Institution :
Toshiba Corp., Semicond. Co., Kawasaki
Abstract :
A novel Marchand balun-based parallel power combiner suitable for a 60-GHz CMOS power amplifier is proposed. It improves the power efficiency by solving the issues of the phase difference of the signals to be combined and the low coupling factor of the on-chip balun in scaled CMOS technologies. The power amplifier using the proposed power combiner is fabricated in a 90 nm CMOS process with 1.2 V supply. Measured power gain, output referred 1-dB compression point, and saturated output power are 11.2 dB, +8.3 dBm, and +11.2 dBm, respectively, at 60-GHz.
Keywords :
CMOS integrated circuits; baluns; millimetre wave amplifiers; millimetre wave integrated circuits; power amplifiers; power combiners; CMOS power amplifier; CMOS process; Marchand balun-based parallel power combiner; coupling factor; frequency 60 GHz; on-chip balun; output referred 1-dB compression point; phase difference; power efficiency; power gain; saturated output power; size 90 nm; voltage 1.2 V; CMOS process; CMOS technology; Frequency; Impedance matching; Power amplifiers; Power combiners; Power generation; Power measurement; Semiconductor optical amplifiers; Transceivers;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708744
