Title :
Ultra low phase noise SiGe HBT. Application to a C band sapphire resonator oscillator
Author :
Cibiel, G. ; Regis, M. ; Llopis, O. ; Kersale, Y. ; Giordano, V. ; Lafontaine, H. ; Plana, R. ; Chaubet, M.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, the electrical and noise performance of a 0.8 /spl mu/m Silicon Germanium (SiGe) transistor optimized for the design of low phase noise circuits are described. The nonlinear model developed for the transistor and its use for the design of low phase noise C band Sapphire resonator oscillator are reported. The best measured phase noise (at ambient temperature) is -133 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency for a loaded Q/sub L/ factor of 60,000.
Keywords :
Ge-Si alloys; Q-factor; dielectric resonator oscillators; heterojunction bipolar transistors; phase noise; sapphire; semiconductor device models; semiconductor device noise; semiconductor materials; 0.8 micron; 4.85 GHz; Al/sub 2/O/sub 3/; C-band; Q-factor; SiGe; SiGe HBT; electrical charcteristics; nonlinear model; phase noise; sapphire resonator oscillator; Circuit noise; Design optimization; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Oscillators; Phase noise; Q measurement; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011715
